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Created with Pixso. LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

Наименование марки: Crystro
Номер модели: SCR-2026-27-01
Время доставки: 5-6НЕДЕЛЬ
Условия оплаты: Т/Т, западное соединение, МонейГрам, ПайПал
Подробная информация
Место происхождения:
Китай
Молекулярная формула:
LaAlO3
Метод роста:
Czochralski
Цистальная структура:
шестиугольная кристаллическая система
Решетка постоянн:
а=5,357 А в=13,22 А
Твердость Моха:
6,5
Плотность:
6,52 г/см3
Точка плавления:
2080°С
Диэлектрическая постоянная:
ε=21
Коэффициент теплового расширения:
10х10-6/К
Потеря ТанС:
~3x10-4 при 300К, ~0,6x10-4 при 77К
Выделить:

LaAlO3 single crystal substrate

,

Lanthanum aluminate substrate for superconductors

,

High-temperature superconducting thin film substrate

Описание продукта

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

 

Lanthanum aluminum oxide (LaAlO3) is a high-temperature superconducting single-crystal substrate material. It is an excellent substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films. Its superior dielectric properties make it suitable for the fabrication of low-loss microwave amplifiers and dielectric resonant devices.

Size Φ76.2mm
Thickness 0.5mm or customer customization
Polishing Double or single throwing
Crystal optics <100>,<110>,<111>
Surface Roughness Ra Ra≤1nm
Crystalline precision ±0.2°
Positioning edge accuracy 2° (customizable within 1°)

Lanthanum aluminate (LaAlO3) single crystal is a kind of industrial, large-size HTS thin film substrate single crystal material. LaAlO3 crystal matches well with many kinds of perovskite structure materials, and is the substrate material for epitaxial growth of high temperature superconducting films and giant magnetoresistance films. At the same time, lanthanum aluminum crystals have a low dielectric constant and good microwave dielectric performance, so they are suitable for low-loss microwave amplifier devices and dielectric resonance applications.

 

Main characteristics:

Low dielectric loss

The lattice matches well

Small coefficient of thermal expansion

Good chemical stability

Good thermal stability

Typical applications:

High-temperature superconducting thin film extension substrate

Giant magnetic film outer lining

Microwave amplification and dielectric resonance

Хорошая цена.  онлайн

Подробная информация о продукции

Created with Pixso. Домой Created with Pixso. продукты Created with Pixso.
Однокристаллические субстраты
Created with Pixso. LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

Наименование марки: Crystro
Номер модели: SCR-2026-27-01
Условия оплаты: Т/Т, западное соединение, МонейГрам, ПайПал
Подробная информация
Место происхождения:
Китай
Фирменное наименование:
Crystro
Номер модели:
SCR-2026-27-01
Молекулярная формула:
LaAlO3
Метод роста:
Czochralski
Цистальная структура:
шестиугольная кристаллическая система
Решетка постоянн:
а=5,357 А в=13,22 А
Твердость Моха:
6,5
Плотность:
6,52 г/см3
Точка плавления:
2080°С
Диэлектрическая постоянная:
ε=21
Коэффициент теплового расширения:
10х10-6/К
Потеря ТанС:
~3x10-4 при 300К, ~0,6x10-4 при 77К
Время доставки:
5-6НЕДЕЛЬ
Условия оплаты:
Т/Т, западное соединение, МонейГрам, ПайПал
Выделить:

LaAlO3 single crystal substrate

,

Lanthanum aluminate substrate for superconductors

,

High-temperature superconducting thin film substrate

Описание продукта

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

 

Lanthanum aluminum oxide (LaAlO3) is a high-temperature superconducting single-crystal substrate material. It is an excellent substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films. Its superior dielectric properties make it suitable for the fabrication of low-loss microwave amplifiers and dielectric resonant devices.

Size Φ76.2mm
Thickness 0.5mm or customer customization
Polishing Double or single throwing
Crystal optics <100>,<110>,<111>
Surface Roughness Ra Ra≤1nm
Crystalline precision ±0.2°
Positioning edge accuracy 2° (customizable within 1°)

Lanthanum aluminate (LaAlO3) single crystal is a kind of industrial, large-size HTS thin film substrate single crystal material. LaAlO3 crystal matches well with many kinds of perovskite structure materials, and is the substrate material for epitaxial growth of high temperature superconducting films and giant magnetoresistance films. At the same time, lanthanum aluminum crystals have a low dielectric constant and good microwave dielectric performance, so they are suitable for low-loss microwave amplifier devices and dielectric resonance applications.

 

Main characteristics:

Low dielectric loss

The lattice matches well

Small coefficient of thermal expansion

Good chemical stability

Good thermal stability

Typical applications:

High-temperature superconducting thin film extension substrate

Giant magnetic film outer lining

Microwave amplification and dielectric resonance